Analysis of Ge segregation in Si using a simultaneous growth and exchange model

被引：22

作者：

Godbey, DJ ^{[1
]}

Ancona, MG ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

SURFACE SCIENCE | 1998年 / 395卷 / 01期

关键词：

computer simulations; germanium; heterojunctions; models of surface kinetics; photoemission (total yield); silicon; surface segregation; x-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(97)00607-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ge segregation data is analyzed using a. simultaneous growth and exchange model in the limit of infinite surface diffusion. This model is found to predict a longer leading edger an enlarged surface Ge storage reservoir and a better temperature dependence than the previously described two-layer model. This suggests;hat surface diffusion and rearrangement plays a more important role in Ge segregation than believed heretofore. (C) 1998 Elsevier Science B.V.

引用

页码：60 / 68

页数：9

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