Formation of poly-crystalline BaSi2 thin films by pulsed laser deposition for solar cell applications

被引：6

作者：

Du, Rui ^{[1
]}

Yang, Kaiwen ^{[1
]}

Gao, Xudan ^{[1
]}

Shi, Wangzhou ^{[1
]}

Du, Weijie ^{[1
]}

Zhang, Yiwen ^{[1
]}

Suemasu, Takashi ^{[2
]}

机构：

[1] Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

MATERIALS LETTERS | 2020年 / 260卷

基金：

中国国家自然科学基金; 上海市自然科学基金;

关键词：

BaSi2; Solar energy materials; Thin films; Pulsed laser deposition;

D O I：

10.1016/j.matlet.2019.126936

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new growth method for BaSi2 thin films by using pulsed laser deposition (PLD) on transparent SiO2 and CaF2 substrates has been developed. X-ray diffraction and Raman spectroscopy revealed the poly-crystalline property of the deposited films. By introducing a thin Si buffer layer on the SiO2 substrate, the crystalline quality of BaSi2 thin films were improved. BaSi2 thin films exhibited a Ba/Si ratio very close to 0.5, indicating the good stoichiometry control of PLD growth. The absorption coefficient of the poly-BaSi2 thin film reached 10(5) cm(-1) and its band gap was deduced to be 1.32 eV, which are similar to those grown by molecular beam epitaxy or sputtering. A maximum photoresponsivity of 12.5 mA/W was achieved in the BaSi2 thin film, which implies the potential of PLD-deposited BaSi2 for thin film solar cell applications. (C) 2019 Elsevier B.V. All rights reserved.

引用

页数：3

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