Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures

被引：518

作者：

Zhang, Kenan ^{[1
]}

Zhang, Tianning ^{[1
]}

Cheng, Guanghui ^{[5
]}

Li, Tianxin ^{[1
]}

Wang, Shuxia ^{[1
]}

Wei, Wei ^{[1
]}

Zhou, Xiaohao ^{[1
]}

Yu, Weiwei ^{[1
]}

Sun, Yan ^{[1
]}

Wang, Peng ^{[1
]}

Zhang, Dong ^{[2
]}

Zeng, Changgan ^{[5
,6
]}

Wang, Xingjun ^{[1
]}

Hu, Weida ^{[1
]}

Fan, Hong Jin ^{[3
]}

Shen, Guozhen ^{[2
]}

Chen, Xin ^{[1
]}

Duan, Xiangfeng ^{[4
]}

Chang, Kai ^{[2
,7
]}

Dai, Ning ^{[1
,7
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[4] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[5] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale HFNL, Hefei 230026, Anhui, Peoples R China

[6] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China

[7] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China

来源：

ACS NANO | 2016年 / 10卷 / 03期

关键词：

van der Waals heterostructure; MoS2; MoTe2; interlayer transition; type-II band alignment; PHOTOCURRENT GENERATION; METAL DICHALCOGENIDES; RAMAN-SCATTERING; CHARGE-TRANSFER; MONOLAYER; TRANSISTORS; GRAPHENE; GROWTH; HETEROJUNCTIONS; EXCITONS;

D O I：

10.1021/acsnano.6b00980

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate the type -II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at similar to 1.55 The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type -II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

引用

页码：3852 / 3858

页数：7

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