Investigation of electrical conductivity in Schottky-barrier devices based on nickel phthalocyanine thin films

被引：38

作者：

El-Nahass, M. M. ^{[1
]}

El-Rahman, K. F. Abd ^{[1
]}

机构：

[1] Ain Shams Univ, Fac Educ, Dept Phys, Cairo 117571, Egypt

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2007年 / 430卷 / 1-2期

关键词：

NiPc thin films; electrical conductivity; SCLC conduction; Schottky-barrier;

D O I：

10.1016/j.jallcom.2006.04.056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Evaporated multilayer sandwich structure of Au/NiPc/Al was fabricated by thermal evaporation technique. The electrical conductivity of Au/NiPc/Al device has been measured both as prepared and after annealing at 623 K for 2 h. Under forward bias conditions, ohmic and SCLC conductions were identified at low and higher voltages respectively. After annealing, a strong rectifying effect was observed. The potential barrier height and the depletion region width for annealed sample were calculated as 0.96 eV and 70 nm, respectively. Hole and trap parameters for as prepared and after annealing devices, also, were evaluated. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：194 / 199

页数：6

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