Lithographic comparison of assist feature design strategies

被引:37
作者
Mansfield, SM [1 ]
Liebmann, LW [1 ]
Molless, AF [1 ]
Wong, AK [1 ]
机构
[1] IBM Corp, Microelect, Hopewell Junction, NY 12533 USA
来源
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2 | 2000年 / 4000卷
关键词
assist features; scattering bars; optical proximity correction; photolithography;
D O I
10.1117/12.389061
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Subresolution assist features, when used in conjunction with off-axis illumination, have shown great promise for reducing proximity effects while improving lithographic process window. However, these patterns result in an increased emphasis on the mask manufacturing process, primarily in the areas of mask writing and inspection. In choosing a design strategy, one must be careful to account for the mask making capabilities, such as write tool grid size and linearity, along with the lithographic effect of errors in the mask making process. In addition to mask errors, stepper lens aberrations and expected process variations can also have a large influence on design rules. Generally, design tradeoffs must be made to balance the impact of these for the best overall lithographic performance.
引用
收藏
页码:63 / 76
页数:14
相关论文
共 22 条
[1]   Performance of the EL-4+maskwriter for advanced chrome on glass reticles [J].
Caldwell, N ;
Jeffer, R ;
Lawliss, M ;
Hartley, JG .
19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 1999, 3873 :493-500
[2]   Practical method for full-chip optical proximity correction [J].
Chen, JF ;
Laidig, T ;
Wampler, KE ;
Caldwell, R .
OPTICAL MICROLITHOGRAPHY X, 1997, 3051 :790-803
[3]   Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars [J].
Chen, JF ;
Laidig, T ;
Wampler, KE ;
Caldwell, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2426-2433
[4]  
FARRAR NR, 2000, P SPIE, V4000
[5]   Data analysis methods for evaluating lithographic performance [J].
Ferguson, RA ;
Martino, RM ;
Brunner, TA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2387-2393
[6]   Towards a comprehensive control of full-field image quality in optical photolithography [J].
Flagello, DG ;
deKlerk, J ;
Davies, G ;
Rogoff, R ;
Geh, B ;
Arnz, M ;
Wegmann, U ;
Kraemer, M .
OPTICAL MICROLITHOGRAPHY X, 1997, 3051 :672-685
[7]   MASK ASSISTED OFF-AXIS ILLUMINATION TECHNIQUE FOR RANDOM LOGIC [J].
GAROFALO, J ;
BIDDICK, CJ ;
KOSTELAK, RL ;
VAIDYA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2651-2656
[8]  
GAROFALO J, 1995, P SOC PHOTO-OPT INS, V2440, P302, DOI 10.1117/12.209262
[9]   PHOTOLITHOGRAPHY SYSTEM USING MODIFIED ILLUMINATION [J].
KAMON, K ;
MIYAMOTO, T ;
MYOI, Y ;
NAGATA, H ;
TANAKA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1A) :239-243
[10]   Application of blazed gratings for determination of equivalent primary azimuthal aberrations [J].
Kirk, JP ;
Progler, CJ .
OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 :70-76