Fused quartz dissolution rate in silicon melts: influence of boron addition

被引：20

作者：

Abe, K ^{[1
]}

Terashima, K ^{[1
]}

Matsumoto, T ^{[1
]}

Maeda, S ^{[1
]}

Nakanishi, H ^{[1
]}

机构：

[1] Shonan Inst Technol, Silicon Melt Adv Project, Fujisawa, Kanagawa 251, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 186卷 / 04期

关键词：

D O I：

10.1016/S0022-0248(97)00618-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of boron addition on fused quartz dissolution rate in silicon melts has been investigated. Fused quartz dissolution rate increases with increasing boron concentration by using SiC-coated crucibles. Whereas, in case of fused quartz crucibles, fused quartz dissolution rate decreases with increasing boron concentration. The temperature dependence of fused quartz dissolution rate in boron-doped silicon melts is markedly observed. It has been found that in both cases the fraction of cristobalite area grown on fused quartz rod surface varies widely the fused quartz dissolution rate. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：557 / 564

页数：8

共 6 条

[1]

ABE K, UNPUB

[2] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&

[3] EROSION OF MATERIALS IN MOLTEN SILICON [J].

CHANEY, RE ;

VARKER, CJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :846-852

[4] DISSOLUTION OF FUSED SILICA IN MOLTEN SILICON [J].

CHANEY, RE ;

VARKER, CJ .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) :188-190

[5] JANAF THERMOCHEMICAL TABLES, 1978 SUPPLEMENT [J].

CHASE, MW ;

CURNUTT, JL ;

MCDONALD, RA ;

SYVERUD, AN .

JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1978, 7 (03) :793-940

[6] THE DISSOLUTION RATE OF SILICA IN MOLTEN SILICON [J].

HIRATA, H ;

HOSHIKAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) :1573-1574

← 1 →