Quantitative electroluminescence analysis of resistive losses in Cu(In, Ga)Se2 thin-film modules

被引：74

作者：

Helbig, Anke ^{[1
]}

Kirchartz, Thomas ^{[2
]}

Schaeffler, Raymund ^{[3
]}

Werner, Juergen H. ^{[1
]}

Rau, Uwe ^{[2
]}

机构：

[1] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

[2] Forschungszentrum Julich, Photovolta IEF5, D-52425 Julich, Germany

[3] Wurth Elekt Res GmbH, D-74523 Schwabisch Hall, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 06期

关键词：

Luminescence; Reciprocity; Cu(In; Ga)Se-2; Thin-film solar cells; SOLAR-CELLS; CU(IN; GA)SE-2; PHOTOLUMINESCENCE; CU(IN1-XGAX)SE-2; QUALITY; SHUNTS;

D O I：

10.1016/j.solmat.2010.01.028

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu(In,Ga)Se-2 mini-modules are investigated by electroluminescence imaging under different bias voltage conditions. The images typically show 10-20 localized shunts on the investigated test modules of an area of 20 x 17 cm(2) with 42 cells. The consequences of these shunts on the performance of the individual cells and of the entire module are quantitatively analyzed by evaluating the electroluminescence images. Our analysis considers the electroluminescence intensity at each surface position of the module to depend on the actual voltage drop across the junction at this specific location. Hence, the analysis of the electroluminescence intensity permits the reconstruction of the current/voltage characteristics of all individual cells of the module. Additionally, we determine the sheet resistance of the ZnO window layer and the Mo back contact from the spatial dependence of the electroluminescence intensity across one solar cell in the module. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：979 / 984

页数：6

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