Synthesis and Atomic Force Microscopy contact current images of aluminum doped ZnO thin films

被引：0

作者：

Munoz Aguirre, N. ^{[1
]}

Rivera Lopez, J. E. ^{[1
]}

Martinez Perez, L. ^{[2
]}

Tamayo Meza, P. ^{[1
]}

机构：

[1] Escuela Super Ingn Mecan & Elect UA, Inst Politecn Nacl, Secc Estudios Posgrad & Invest, Av Granjas 682, Mexico City 02550, DF, Mexico

[2] Avanzadas Inst Politecn Nacl, Unidad Profes Interdisciplinaria Ingn & Tecnol, Mexico City 07340, DF, Mexico

来源：

ADVANCED ELECTRON MICROSCOPY AND NANOMATERIALS | 2010年 / 644卷

关键词：

ZnO thin films; Atomic Force Microscopy; c-AFM;

D O I：

10.4028/www.scientific.net/MSF.644.109

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Aluminum doped ZnO thin films were synthesized by the water-mist assisted spray pyrolysis technique. The structural characterization by means of X-Ray diffraction measurements is reported. By means of Atomic Force Microscopy, the superficial electrical characteristics of the thin films are studied. Specifically, contact current images are shown and discussed. It is important to emphasize that in spite of no voltage is applied to the Atomic Force Microscopy contact conductive tip, current images are getting.

引用

页码：109 / +

页数：2

共 7 条

[1]

[Anonymous], 2004, ADV TEXTS PHYS

[2]

*INT PROD, MICR CLEAN SOL

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