Photoinduced construction of a second covalently bonded organic layer on the Si(111)-7 x 7 surface

被引：13

作者：

Cai, Ying Hui ^{[1
]}

Shao, Yan Xia ^{[1
]}

Xu, Guo Qin ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Chem, Singapore 119260, Singapore

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2007年 / 129卷 / 27期

关键词：

D O I：

10.1021/ja0716655

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

3-Chloro-1-propanol dissociatively adsorbs on the Si(111)-7 x 7 surface via the OH dissociation with the C-Cl bond unperturbed at 110 K. The C-Cl bond was then cleaved by a 193 nm photon to produce one radical site on the C atom, which subsequently reacted with one nearby physisorbed benzonitrile molecule via the cyano group to form a second covalently bonded organic layer. The newly generated radical site on the cyano group abstracts a nearby H atom. In this work, we successfully constructed the second chemically attached organic layer on the Si(111)-7 x 7 surface and demonstrated that photochemical methods are powerful tools in organic modification of silicon surfaces.

引用

页码：8404 / +

页数：3

共 50 条

[1] Architecturing Covalently Bonded Organic Bilayers on the Si(111)-(7 x 7) Surface via in Situ Photoinduced Reaction
Zhang, Yong Ping
He, Jing Hui
Xu, Guo Qin
Tok, Eng Soon
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (16): : 8943 - 8949
[2] Second harmonic response of the Si(111)7 x 7 surface
Mejia, J. E.
Mendoza, Bernardo S.
Pedersen, Kjeld
SURFACE SCIENCE, 2011, 605 (9-10) : 941 - 946
[3] Templating an organic layer with the Si(111)-7 x 7 surface reconstruction using steric constraints
Weymouth, A. J.
Edge, G. J. A.
McLean, A. B.
Miwa, R. H.
Srivastava, G. P.
PHYSICAL REVIEW B, 2011, 84 (16)
[4] Roughening of the surface of an Si layer grown on an Si(111)-(7x7) superlattice
Shigeta, Y
Endo, J
Fujino, H
Maki, K
SURFACE SCIENCE, 1996, 357 (1-3) : 414 - 417
[5] Layer-by-layer atomic manipulation on Si(111)-7x7 surface
Komeda, T
Hasunuma, R
Mukaida, H
Tokumoto, H
APPLIED PHYSICS LETTERS, 1996, 68 (24) : 3482 - 3484
[6] Surface phonons of the Si(111)-7 x 7 reconstructed surface
Powder Diffr, 40 (14 709):
[7] C60 layer growth on the Co/Si(111)√7 x √7 surface
Olyanich, D. A.
Utas, T. V.
Kotlyar, V. G.
Zotov, A. V.
Saranin, A. A.
Romashev, L. N.
Solin, N. I.
Ustinov, V. V.
APPLIED SURFACE SCIENCE, 2014, 292 : 954 - 957
[8] Layer-by-layer atomic manipulation on Si(111)-7×7 surface
Appl Phys Lett, 24 (3482):
[9] Fermi surface of Si(111)7X7
Losio, R
Altmann, KN
Himpsel, FJ
PHYSICAL REVIEW B, 2000, 61 (16) : 10845 - 10853
[10] Adatom vacancies on the Si(111)-(7 x 7) surface
Wang, CZ
Pan, BC
Xiang, JB
Ho, KM
SURFACE SCIENCE, 1999, 436 (1-3) : L697 - L701

← 1 2 3 4 5 →