Spontaneous formation of a tilted AlGaAs/GaAs superlattice during AlGaAs growth

被引:1
作者
Hartmann, A [1 ]
Dieker, C [1 ]
Hollfelder, M [1 ]
Hardtdegen, H [1 ]
Forster, A [1 ]
Luth, H [1 ]
机构
[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany
关键词
D O I
10.1016/S0169-4332(97)00533-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In transmission electron microscopical (TEM) cross-sections of AlGaAs layers grown on vicinal {111}A facets of patterned substrates, we observe a periodic structure of Ga-rich and Al-rich layers forming angles of up to 25 degrees with the growth front. This spontaneous tilted superlattice (TSL) formation is found in layers grown by metal-organic vapor phase epitaxy using the group III precursors dimethylethylaminealane (DMEAA1) and triethylgallium (TEGa) and in samples grown by solid source MBE. We present a growth model explaining the TSL formation in terms of step bunching and adatom diffusion. The step bunches required by the model are experimentally found by atomic force microscopy as well as high resolution TEM. Finally, we introduce a Monte Carlo simulation, which is able to reproduce the main features of the spontaneously formed TSL. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:704 / 709
页数:6
相关论文
共 12 条
  • [1] BANGERT U, COMMUNICATION
  • [2] LATERAL MOTION OF TERRACE WIDTH DISTRIBUTIONS DURING STEP-FLOW GROWTH
    CHALMERS, SA
    TSAO, JY
    GOSSARD, AC
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (06) : 645 - 647
  • [3] SPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIES
    CHIN, A
    HSIEH, KY
    LIN, HY
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (15) : 1921 - 1923
  • [4] CHIN A, 1995, J CRYST GROWTH, V150, P436, DOI 10.1016/0022-0248(94)00858-2
  • [5] AL-GA INTERDIFFUSION IN HEAVILY CARBON-DOPED ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
    GUIDO, LJ
    CUNNINGHAM, BT
    NAM, DW
    HSIEH, KC
    PLANO, WE
    MAJOR, JS
    VESELY, EJ
    SUGG, AR
    HOLONYAK, N
    STILLMAN, GE
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) : 2179 - 2182
  • [6] Growth of modulation-doped GaAs/AlGaAs quantum wires on V-groove patterned substrates
    Hartmann, A
    Bongartz, M
    Hollfelder, M
    Hardtdegen, H
    Dieker, C
    Luth, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 605 - 610
  • [7] Strain-induced phase separation in annealed low-temperature grown Al0.3Ga0.7As
    Hsieh, KC
    Hsieh, KY
    Hwang, YL
    Zhang, T
    Kolbas, RM
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1790 - 1792
  • [8] STEP BUNCHING AS A CHAOTIC PATTERN-FORMATION PROCESS
    KANDEL, D
    WEEKS, JD
    [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (26) : 3758 - 3761
  • [9] SIMULTANEOUS BUNCHING AND DEBUNCHING OF SURFACE STEPS - THEORY AND RELATION TO EXPERIMENTS
    KANDEL, D
    WEEKS, JD
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (18) : 3632 - 3635
  • [10] UNSTABLE REGIONS IN III-V QUATERNARY SOLID-SOLUTIONS COMPOSITION PLANE CALCULATED WITH STRICTLY REGULAR SOLUTION APPROXIMATION
    ONABE, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L323 - L325