Radiation enhanced diffusion of B in crystalline Ge

被引：5

作者：

Bruno, E. ^{[1
,2
]}

Mirabella, S. ^{[1
,2
]}

Scapellato, G. ^{[1
,2
]}

Impellizzeri, G. ^{[1
,2
]}

Terrasi, A. ^{[1
,2
]}

Priolo, F. ^{[1
,2
]}

Napolitani, E. ^{[3
,4
]}

De Salvador, D. ^{[3
,4
]}

Mastromatteo, M. ^{[3
,4
]}

Carnera, A. ^{[3
,4
]}

机构：

[1] Univ Catania, MATIS, CNR, INFM, I-95123 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] Univ Padua, MATIS, CNR, INFM, I-35131 Padua, Italy

[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 09期

关键词：

Germanium; Boron; Diffusion; Ion implantation; Point-defects; BORON; MECHANISMS; GERMANIUM; SILICON; SI;

D O I：

10.1016/j.tsf.2009.09.173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we propose an alternative methodology to study B diffusion in crystalline Ge We enhance B diffusion by means of implants in such a way to increase the point-defects distribution through the sample, well above the equilibrium value A comparison between B diffusion Occurring tinder implantation with different ions or after post-implantation annealing allowed to discern any possible role of ionization effects on B diffusion Indeed, B diffusion is demonstrated to Occur through a point-defect-mediated mechanism. The diffusion mechanism is hence discussed These results are a key point for a full comprehension of the B diffusion in Ge. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2386 / 2389

页数：4