Shot noise reduction of space charge limited electron injection through a Schottky contact for a GaN diode

We present a one-dimensional model of shot noise reduction of space charge limited electron injection through a Schottky contact for a GaN diode assuming the length of the diode is much larger than the electron inelastic scattering mean-free path. The shot noise reduction due to both Coulomb repulsion and quantum partitioning is determined consistently, where the former is due to the space charge electrostatic field created by the injected electrons, and the latter is due to the electron tunneling through the self-consistent potential profile near to the contact. The shot noise reduction is calculated in the form of Fano factor over a wide range of applied voltage for various values of Schottky barrier height (0-0.5 eV), temperature (100-500 K), and length of the diode (0.1-10 mu m). At high voltage, and high current regime, the shot noise suppression increases with large applied voltage, small diode length, low temperature, and small barrier height. Our model also indicates that the distributed traps in the solid almost has no effect to the shot noise reduction as compared to trap-free solid.