Resistive switching and related magnetization switching in Pt/BiFeO3/Nb:SrTiO3 heterostructures

被引：32
作者：
Zhao, Meng [1 ,2 ]
Zhu, Yongdan [1 ,2 ]
Zhang, Yuan [1 ]
Zhang, Tingting [1 ]
Qiu, Da [1 ]
Lai, Guohong [1 ]
Hu, Cheng [1 ]
Wang, Qiangwen [2 ]
Zhang, Feng [2 ]
Li, Meiya [2 ]
机构：
[1] Hubei Univ Nationalities, Sch Informat Engineer, Enshi 445000, Hubei, Peoples R China
[2] Wuhan Univ, Minist Educ, Sch Phys & Technol, Key Lab Artificial Micro Nano Struct, Wuhan 430072, Peoples R China
来源：
RSC ADVANCES | 2017年 / 7卷 / 38期
基金：
中国国家自然科学基金;
关键词：
THIN-FILM HETEROSTRUCTURES; ELECTRIC-FIELD CONTROL; ROOM-TEMPERATURE; MEMORY; MULTIFERROICS; MAGNETISM;
D O I：
10.1039/c7ra00242d
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
BiFeO3 (BFO) thin films were epitaxially grown on a 0.7 wt% Nb-doped (001) SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition to form a Pt/BFO/NSTO heterostructure. This heterostructure exhibits stable bipolar resistive switching behavior with a maximum R-off/R-on ratio of 10(5), well retention and multilevel memory properties. Meanwhile, the saturation magnetization (M-s) of BFO film shows reversible switching upon different resistance states. The BFO film shows high saturation magnetization at a high resistance state, while it shows low saturation magnetization at a low resistance state. These resistive and magnetization switching properties are attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier via the charge trapping and detrapping process combined with the migration of oxygen vacancies at the BFO/NSTO interface. This study demonstrates that Pt/BFO/NSTO heterostructure has potential application in nonvolatile resistive switching memory and novel magnetoelectric coupling devices.
引用
收藏
页码：23287 / 23292
页数：6
相关论文
共 36 条
[1]  
Chang Jaewan, 2006, Journal of Magnetics, V11, P108
[2]   Magnetization switching in the BiFe0.9Mn0.1O3 thin films modulated by resistive switching process [J].
Chen, Guangyi ;
Bi, Guifeng ;
Song, Lin ;
Weng, Yakui ;
Pan, Danfeng ;
Li, Yongchao ;
Dong, Shuai ;
Tang, Tao ;
Liu, Jun-ming ;
Wan, Jian-guo .
APPLIED PHYSICS LETTERS, 2016, 109 (11)
[3]   Electric-field control of local ferromagnetism using a magnetoelectric multiferroic [J].
Chu, Ying-Hao ;
Martin, Lane W. ;
Holcomb, Mikel B. ;
Gajek, Martin ;
Han, Shu-Jen ;
He, Qing ;
Balke, Nina ;
Yang, Chan-Ho ;
Lee, Donkoun ;
Hu, Wei ;
Zhan, Qian ;
Yang, Pei-Ling ;
Fraile-Rodriguez, Arantxa ;
Scholl, Andreas ;
Wang, Shan X. ;
Ramesh, R. .
NATURE MATERIALS, 2008, 7 (06) :478-482
[4]   Controlling magnetism with multiferroics [J].
Chu, Ying-Hao ;
Martin, Lane W. ;
Holcomb, Mikel B. ;
Ramesh, Ramamoorthy .
MATERIALS TODAY, 2007, 10 (10) :16-23
[5]   Weak ferromagnetism and magnetoelectric coupling in bismuth ferrite [J].
Ederer, C ;
Spaldin, NA .
PHYSICAL REVIEW B, 2005, 71 (06)
[6]   Comment on "Epitaxial BiFeO3 multiferroic thin film heterostructures" [J].
Eerenstein, W ;
Morrison, FD ;
Dho, J ;
Blamire, MG ;
Scott, JF ;
Mathur, ND .
SCIENCE, 2005, 307 (5713) :1203-1203
[7]   Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions [J].
Fujii, T. ;
Kawasaki, M. ;
Sawa, A. ;
Kawazoe, Y. ;
Akoh, H. ;
Tokura, Y. .
PHYSICAL REVIEW B, 2007, 75 (16)
[8]   Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure [J].
Hu, Zhongqiang ;
Li, Qian ;
Li, Meiya ;
Wang, Qiangwen ;
Zhu, Yongdan ;
Liu, Xiaolian ;
Zhao, Xingzhong ;
Liu, Yun ;
Dong, Shuxiang .
APPLIED PHYSICS LETTERS, 2013, 102 (10)
[9]   Epitaxial growth and capacitance-voltage characteristics of BiFeO3/CeO2/yttria-stabilized zirconia/Si(001) heterostructure [J].
Hu, Zhongqiang ;
Li, Meiya ;
Zhu, Yongdan ;
Pu, Shizhou ;
Liu, Xiaolian ;
Sebo, Bobby ;
Zhao, Xingzhong ;
Dong, Shuxiang .
APPLIED PHYSICS LETTERS, 2012, 100 (25)
[10]   Amorphous ZnO based resistive random access memory [J].
Huang, Yong ;
Shen, Zihan ;
Wu, Ye ;
Wang, Xiaoqiu ;
Zhang, Shufang ;
Shi, Xiaoqin ;
Zeng, Haibo .
RSC ADVANCES, 2016, 6 (22) :17867-17872
1234