A comprehensive theoretical and experimental study on structural and mechanical properties of Si doped ZnO

被引：6
|
作者：
Bajpai, Gaurav [1 ]
Srivastava, Tulika [1 ]
Nasir, Mohd [2 ]
Tiwari, Saurabh [1 ]
Bajpai, Shubhra [3 ]
Rini, E. G. [1 ]
Biring, Sajal [4 ]
Sen, Somaditya [1 ,2 ]
机构：
[1] Indian Inst Technol Indore, Met Engn & Mat Sci, Indore, Madhya Pradesh, India
[2] Indian Inst Technol Indore, Dept Phys, Indore, Madhya Pradesh, India
[3] Inst Minerals & Mat Technol Bhubaneswar, CSIR, Bhubaneswar, Odisha, India
[4] Ming Chi Univ Technol, Elect Engn, New Taipei, Taiwan
来源：
SCRIPTA MATERIALIA | 2017年 / 135卷
关键词：
Hardness; Lattice parameter; ZnO structure; Mechanical property; BULK MODULUS; THIN-FILMS; TETRAHEDRAL SEMICONDUCTORS; ELECTRICAL-PROPERTIES; ELECTRONEGATIVITY; ENERGIES; HARDNESS; SOLIDS; GAAS;
D O I：
10.1016/j.scriptamat.2017.03.022
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Si4+ is a smaller ion with higher charge compared to Zn2+. When incorporated in ZnO lattice, above a certain amount, the Si4+ ions create defects at the substituted sites. The Zn and O planes are dragged closer to each other by Si substitution while the lattice expansion along c-axis is more than that along a or b axes. However, the c/a ratio decreases continuously. The mechanical property deteriorates with substitution as well at par with the structural changes. Experimentally observed mechanical hardness of Si4+ substituted ZnO pellets decrease with incorporation of Si following the theoretical trend. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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页码：1 / 4
页数：4
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