A comprehensive theoretical and experimental study on structural and mechanical properties of Si doped ZnO

被引：6

作者：

Bajpai, Gaurav ^{[1
]}

Srivastava, Tulika ^{[1
]}

Nasir, Mohd ^{[2
]}

Tiwari, Saurabh ^{[1
]}

Bajpai, Shubhra ^{[3
]}

Rini, E. G. ^{[1
]}

Biring, Sajal ^{[4
]}

Sen, Somaditya ^{[1
,2
]}

机构：

[1] Indian Inst Technol Indore, Met Engn & Mat Sci, Indore, Madhya Pradesh, India

[2] Indian Inst Technol Indore, Dept Phys, Indore, Madhya Pradesh, India

[3] Inst Minerals & Mat Technol Bhubaneswar, CSIR, Bhubaneswar, Odisha, India

[4] Ming Chi Univ Technol, Elect Engn, New Taipei, Taiwan

来源：

SCRIPTA MATERIALIA | 2017年 / 135卷

关键词：

Hardness; Lattice parameter; ZnO structure; Mechanical property; BULK MODULUS; THIN-FILMS; TETRAHEDRAL SEMICONDUCTORS; ELECTRICAL-PROPERTIES; ELECTRONEGATIVITY; ENERGIES; HARDNESS; SOLIDS; GAAS;

D O I：

10.1016/j.scriptamat.2017.03.022

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si4+ is a smaller ion with higher charge compared to Zn2+. When incorporated in ZnO lattice, above a certain amount, the Si4+ ions create defects at the substituted sites. The Zn and O planes are dragged closer to each other by Si substitution while the lattice expansion along c-axis is more than that along a or b axes. However, the c/a ratio decreases continuously. The mechanical property deteriorates with substitution as well at par with the structural changes. Experimentally observed mechanical hardness of Si4+ substituted ZnO pellets decrease with incorporation of Si following the theoretical trend. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1 / 4

页数：4

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