Influence of Showerhead-Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth

被引：2

作者：

Czernecki, Robert ^{[1
]}

Moszak, Karolina ^{[2
]}

Olszewski, Wojciech ^{[2
]}

Grzanka, Ewa ^{[1
]}

Leszczynski, Mike ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

[2] PORT Polish Ctr Technol Dev, Lukasiewicz Res Network, Stablowicka 147, PL-54066 Wroclaw, Poland

来源：

MATERIALS | 2019年 / 12卷 / 20期

关键词：

nitrides; epitaxy; metalorganic vapour phase epitaxy;

D O I：

10.3390/ma12203375

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III ratio and growth pressure). Regardless of other growth parameters, increasing the GAP value leads to a reduction in the growth rate.

引用

页数：4

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