An analytical avalanche breakdown model for double gate MOSFET

被引：3

作者：

Cho, Edward Narnkyu ^{[1
]}

Shin, Yong Hyeon ^{[1
]}

Yun, Ilgu ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 01期

关键词：

DG MOSFET; Avalanche breakdown model; Channel length modulation; Effective mobility model; DRAIN-CURRENT MODEL; SILICON;

D O I：

10.1016/j.microrel.2014.08.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (mu(eff)) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson's equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (Delta L). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：38 / 41

页数：4

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