Enhanced Hall slope in wide AlxGax-1As parabolic wells

被引：6

作者：

de Zevallos, A. M. Ortiz

Mamani, N. C.

Gusev, G. M.

Quivy, A. A.

Lamas, T. E.

Portal, J. C.

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil

[2] CNRS, GHMFL, F-38042 Grenoble 9, France

[3] INSA Toulouse, F-31077 Toulouse 4, France

[4] Inst Univ France, Toulouse, France

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.75.205324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of the Hall effect in 1000-4000 A wide AlxGax-1As parabolic wells with quasi-two-dimensional electrons and holes in a perpendicular magnetic field. Above a critical magnetic field B > 3T, the Hall resistance for wide parabolic wells is found to be enhanced when the temperature decreases. We attribute this enhanced Hall slope to a carrier density effect. The Hartree and exchange-correlation terms produce a strong variation of the potential-well shape. The width of the electronic and hole slabs shrinks as the magnetic field is increased, which leads to the redistribution of the charge between the well and impurity layer.

引用

页数：8

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