Speedster-EXD: a new event-driven hybrid CMOS x-ray detector

被引:20
作者
Griffith, Christopher V. [1 ]
Falcone, Abraham D. [1 ]
Prieskorn, Zachary R. [1 ]
Burrows, David N. [1 ]
机构
[1] Penn State Univ, Dept Astron & Astrophys, 525 Davey Lab, University Pk, PA 16802 USA
关键词
complementary metal-oxide semiconductor; sparse readout; event driven; complementary metal-oxide semiconductor x-ray detector; charge coupled device; FANO FACTOR; PERFORMANCE; SILICON; ENERGY; SI;
D O I
10.1117/1.JATIS.2.1.016001
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
The Speedster-EXD is a new 64 x 64 pixel(2), 40-mu m pixel pitch, 100-mu m depletion depth hybrid CMOS x-ray detector with the capability of reading out only those pixels containing event charge, thus enabling fast effective frame rates. A global charge threshold can be specified, and pixels containing charge above this threshold are flagged and read out. The Speedster detector has also been designed with other advanced in-pixel features to improve performance, including a low-noise, high-gain capacitive transimpedance amplifier that eliminates interpixel capacitance crosstalk (IPC), and in-pixel correlated double sampling subtraction to reduce reset noise. We measure the best energy resolution on the Speedster-EXD detector to be 206 eV (3.5%) at 5.89 keV and 172 eV (10.0%) at 1.49 keV. The average IPC to the four adjacent pixels is measured to be 0.25% +/- 0.2% (i.e., consistent with zero). The pixel-to-pixel gain variation is measured to be 0.80% +/- 0.03%, and a Monte Carlo simulation is applied to better characterize the contributions to the energy resolution. (c) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数:13
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