Charge Pump Circuits: An Overview on Design Strategies and Topologies

被引：222
作者：
Palumbo, Gaetano [1 ]
Pappalardo, Domenico [1 ]
机构：
[1] Univ Catania, DIEES, I-95125 Catania, Italy
来源：
IEEE CIRCUITS AND SYSTEMS MAGAZINE | 2010年 / 10卷 / 01期
关键词：
HIGH-VOLTAGE GENERATOR; HIGH-SIDE SWITCH; CONVERSION RATIOS; FLASH MEMORIES; EEPROM; CMOS; CONVERTER; SCHEME; OPTIMIZATION; TECHNOLOGY;
D O I：
10.1109/MCAS.2009.935695
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Due to the continuous power supply reduction, charge pumps circuits are widely used in integrated circuits (ICs) devoted to several kind of applications such as smart power, nonvolatile memories, switched capacitor circuits, operational amplifiers, voltage regulators, SRAMs, LCD drivers, piezoelectric actuators, RF antenna switch controllers, etc. The main focus of this tutorial manuscript is to provide a deep understanding of the charge pumps behavior, to present useful models and key parameters and to organically and in details discuss the optimized design strategies. Finally, an overview of the main different topologies is also included.
引用
收藏
页码：31 / 45
页数：15
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