Low-temperature phase transitions in a soluble oligoacene and their effect on device performance and stability

被引:9
|
作者
Ward, J. W. [1 ]
Goetz, K. P. [1 ]
Obaid, A. [1 ]
Payne, M. M. [2 ]
Diemer, P. J. [1 ]
Day, C. S. [3 ]
Anthony, J. E. [2 ]
Jurchescu, O. D. [1 ]
机构
[1] Wake Forest Univ, Dept Phys, Winston Salem, NC 27109 USA
[2] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
[3] Wake Forest Univ, Dept Chem, Winston Salem, NC 27109 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC SEMICONDUCTORS; CHARGE-TRANSPORT; ALPHA-SEXITHIOPHENE; SPRAY-DEPOSITION; PENTACENE; POLYMORPHISM; ANTHRADITHIOPHENE; OLIGOTHIOPHENES;
D O I
10.1063/1.4894238
中图分类号
O59 [应用物理学];
学科分类号
摘要
The use of organic semiconductors in high-performance organic field-effect transistors requires a thorough understanding of the effects that processing conditions, thermal, and bias-stress history have on device operation. Here, we evaluate the temperature dependence of the electrical properties of transistors fabricated with 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, a material that has attracted much attention recently due to its exceptional electrical properties. We have discovered a phase transition at T = 205 K and discuss its implications on device performance and stability. We examined the impact of this low-temperature phase transition on the thermodynamic, electrical, and structural properties of both single crystals and thin films of this material. Our results show that while the changes to the crystal structure are reversible, the induced thermal stress yields irreversible degradation of the devices. (C) 2014 AIP Publishing LLC.
引用
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页数:5
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