Numerical Simulation: Design of High-Efficiency Planar p-n Homojunction Perovskite Solar Cells

被引:40
作者
Sengar, Brajendra S. [1 ]
Garg, Vivek [2 ]
Kumar, Amitesh [3 ]
Dwivedi, Praveen [4 ]
机构
[1] Dr APJ Abdul Kalam Tech Univ, Ctr Adv Studies, Lucknow 226031, Uttar Pradesh, India
[2] Natl Inst Technol NIT, Dept Elect & Commun Engn, Surat 395007, India
[3] Natl Inst Technol NIT, Dept Elect Engn, Patna 800005, Bihar, India
[4] IIT Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
关键词
CZTSSe; photovoltaic cells; simulation; thin film;
D O I
10.1109/TED.2021.3066454
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Perovskite-based solar cells with planar configuration have been perceived as an alternative and attractive option for photovoltaic technology due to high power conversion efficiency (PCE). The performance of heterojunction-based devices is hindered by the recombination in the perovskite layers. The homojunction is suitable for further improvement in PCE due to the built-in electric field, which will enhance the transport of photogenerated charge carriers, therefore, reducing recombination losses. A detailed analysis of the homojunction-based device is needed for further improvement in PCE. In this study, the planarhomojunction perovskite photovoltaic device has been simulatedby solar cell capacitancesimulator (SCAPS). Simulation analysis shows the dependence of PCE on the thickness and defects of the perovskite layer. Recombination analysis at the different junctions has been simulated using hypothetical interface layers at the respective junctions. It has been revealed that the interface defects influence the device performance. The proposed MAPbI(3) homojunction-based devices have achievedmore than 23% PCE, which is significantly higher than the existing planar heterojunction-based devices.
引用
收藏
页码:2360 / 2364
页数:5
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