Analysis of the Electrical Parameters in SOI n-type Junctionless Nanowire Transistors at High Temperatures

被引：0
作者：
Ribeiro, T. A.
Pavanello, M. A.
机构：
来源：
LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC 2020) | 2020年
基金：
巴西圣保罗研究基金会;
关键词：
Threshold Voltage; Carrier Mobility; High Temperature; Junctionless; Nanowires; SOI; PERFORMANCE; MOSFETS; MOBILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work studies the effects of the temperature from 300K to 500K on the electrical parameters of SOI n-type junctionless nanowire transistors. The temperature influence on the threshold voltage and the effective carrier mobility were analyzed for narrow fin width. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as it major component, although there is a significant component of the ionized impurity scattering that can be identified as well.
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页数：4
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