Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition

被引：54

作者：

Luka, Grzegorz ^{[1
]}

Krajewski, Tomasz ^{[1
]}

Wachnicki, Lukasz ^{[1
]}

Witkowski, Bartlomiej ^{[2
]}

Lusakowska, Elzbieta ^{[1
]}

Paszkowicz, Wojciech ^{[1
]}

Guziewicz, Elzbieta ^{[1
]}

Godlewski, Marek ^{[1
,2
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-00668 Warsaw, Poland

[2] Cardinal Stefan Wyszynski Univ, Dept Math & Nat Sci, Coll Sci, PL-01815 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 07期

关键词：

atomic layer deposition; electrical properties; morphology; optical properties; structure; ZnO; ZNO;

D O I：

10.1002/pssa.200983709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer deposition (ALD) was used to fabricate transparent and conductive thin films of ZnO. Two hundred-nano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240 degrees C. As zinc and oxygen precursors we used diethylzinc (DEZn) and deionized water, respectively. To find optimal film parameters, the structure, surface morphology, optical and electrical measurements were carried on. The films obtained at 200 degrees C show the highest carrier concentration (similar to 10(20)cm(-3)) and the lowest resistivity (2 x 10(-3) Omega cm). The films exhibit mobilities up to 37 cm(2)/Vs that we associate to the process technology used. An important point of our approach was that the films studied were not intentionally doped (with Al or other group III elements) but the high electrical conductivity was achieved by playing with the sample stoichiometry and growth conditions. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1568 / 1571

页数：4

共 19 条

[1] Highly textured and conductive undoped ZnO film using hydrogen post-treatment
Baik, SJ
Jang, JH
Lee, CH
Cho, WY
Lim, KS
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (26) : 3516 - 3518
[2] Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties
Ellmer, K
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (04) : R17 - R32
[3] Ellmer K, 2008, SPRINGER SER MATER S, V104, P1, DOI 10.1007/978-3-540-73612-7
[4] Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications
Fortunato, E.
Raniero, L.
Silva, L.
Goncalves, A.
Pimentel, A.
Barquinha, P.
Aguas, H.
Pereira, L.
Goncalves, G.
Ferreira, I.
Elangovan, E.
Martins, R.
[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (12) : 1605 - 1610
[5] Fully transparent ZnO thin-film transistor produced at room temperature
Fortunato, EMC
Barquinha, PMC
Pimentel, ACMBG
Gonçalves, AMF
Marques, AJS
Pereira, LMN
Martins, RFP
[J]. ADVANCED MATERIALS, 2005, 17 (05) : 590 - +
[6] Photoluminescent and structural properties of precipitated ZnO fine particles
Gomi, M
Oohira, N
Ozaki, K
Koyano, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (2A): : 481 - 485
[7] Extremely low temperature growth of ZnO by atomic layer deposition
Guziewicz, E.
Kowalik, I. A.
Godlewski, M.
Kopalko, K.
Osinniy, V.
Wojcik, A.
Yatsunenko, S.
Lusakowska, E.
Paszkowicz, W.
Guziewicz, M.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)
[8] ZnO: From basics towards applications
Klingshirn, C.
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09): : 3027 - 3073
[9] Optical and electrical properties of epitaxial (Mg,Cd)xZn1-xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition
Lorenz, M
Kaidashev, EM
von Wenckstern, H
Riede, V
Bundesmann, C
Spemann, D
Benndorf, G
Hochmuth, H
Rahm, A
Semmelhack, HC
Grundmann, M
[J]. SOLID-STATE ELECTRONICS, 2003, 47 (12) : 2205 - 2209
[10] Zinc oxide as an ozone sensor
Martins, R
Fortunato, E
Nunes, P
Ferreira, I
Marques, A
Bender, M
Katsarakis, N
Cimalla, V
Kiriakidis, G
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) : 1398 - 1408

← 1 2 →