Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFET's

被引：24
|
作者：
Okhonin, S
Hessler, T
Dutoit, M
机构：
[1] Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 04期
关键词：
D O I：
10.1109/16.485543
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Improved methods for extracting lateral spatial profiles of interface traps in electrically stressed MOSFET's from gate induced drain leakage and charge pumping measurements are proposed, Simplified theoretical models are developped. The formal similarity of the two methods is shown. The results obtained on submicron MOSFET after uniform (Fowler-Nordheim) and nonuniform (hot carrier) stress are compared and found to be in good agreement. The relative merits of these techniques are discussed.
引用
收藏
页码：605 / 612
页数：8
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