Gas-phase modification of the direct current electrophosphor

被引：0

作者：

Kupriyanov, VD ^{[1
]}

Stepanova, NA ^{[1
]}

Sinelnikov, BM ^{[1
]}

Sychov, MM ^{[1
]}

Korsakov, VG ^{[1
]}

机构：

[1] St Petersburg Inst Technol, St Petersburg 198013, Russia

来源：

OPTOELECTRONIC MATERIALS AND TECHNOLOGY IN THE INFORMATION AGE | 2002年 / 126卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface of ZnS direct current electrophosphor grains is usually modified from water solutions. Essential disadvantage of this method is considerable degradation of the modified electrophosphor brightness due to adsorption of the water vapours on its surface. We report in this paper results of direct current electrophosphor surface modification by the Atomic Layer Epitaxy method. Reactions between ZnS(Mn) electrophosphor and copper acetylacetonate vapours ware carried out at temperature of 453-493 K. Reaction products were studied by XPS, IR-spectroscopy and diffuse reflection spectroscopy. Degradation of brightness for the electrophosphor samples, modified by the Atomic Layer Epitaxy method is 25-30% less than that for samples obtained by treating in water solutions.

引用

页码：37 / 41

页数：5