High-performance infrared photo-transistor based on SWCNT decorated with PbS nanoparticles

被引：17

作者：

Asad, Mohsen ^{[1
]}

Fathipour, Morteza ^{[2
]}

Sheikhi, Mohammad Hossein ^{[1
]}

Pourfath, Mandi ^{[2
,3
]}

机构：

[1] Shiraz Univ, Sch Elect & Comp Engn, Shiraz 713451585, Iran

[2] Univ Tehran, Sch Elect & Comp Engn, Tehran 14395515, Iran

[3] TU Wien, Inst Microelect, A-1040 Vienna, Austria

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2014年 / 220卷

关键词：

Photo-transistor; Fast switching; Nanotube; Lead sulfide nanoparticles; Transport characteristics; WALL CARBON NANOTUBES; QUANTUM DOTS; PHOTOCONDUCTIVITY; NANOCOMPOSITES; ASSEMBLIES;

D O I：

10.1016/j.sna.2014.10.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low-cost high-gain infrared photo-transistor based on a nano-heterostructure comprising of a single wall carbon nanotube (SWCNT) decorated with PbS nanoparticles (NPs). These structures are prepared using a solution based process with chemical bonding of PbS NPs on SWCNT walls. SWCNT act as an efficient electron transfer channel from PbS NPs to electrodes. By optimization the band alignment between PbS NPs and the SWCNTs fast transfer of electrons is achieved. Fabricated photo-transistor exhibits a relatively fast response with an enhanced sensitivity up to 35% under a laser illumination with a wavelength of 1550 nm and a power intensity of about 2 mW/cm(2). Conversion from p-type to n-type operation is obtained by changing the polarity of the gate voltage. High gain, excellent on/off photo-current ratio and stable operation indicate potential application of SWCNT as a charge extraction strategy. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：213 / 220

页数：8

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