A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

被引：6
作者：
Dong, Peng [1 ,2 ]
Yu, Xuegong [3 ,4 ]
Ma, Yao [5 ]
Xie, Meng [3 ,4 ]
Li, Yun [5 ]
Huang, Chunlai [6 ]
Li, Mo [1 ,2 ]
Dai, Gang [1 ,2 ]
Zhang, Jian [1 ,2 ]
机构：
[1] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Mianyang 621999, Peoples R China
[2] China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Peoples R China
[3] Zhejiang Univ, State Key Lab Si Mat, Hangzhou 310027, Peoples R China
[4] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China
[5] Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610065, Sichuan, Peoples R China
[6] Jiangsu GCL Silicon Mat Technol Dev Co Ltd, Jiangsu Key Lab Silicon Based Elect Mat, Xuzhou 221000, Peoples R China
来源：
AIP ADVANCES | 2017年 / 7卷 / 08期
基金：
中国国家自然科学基金;
关键词：
SURFACE PASSIVATION; SOLAR-CELLS; INTERFACE STATES; OXIDE CHARGE; QUALITY; FILMS; TRAP; DLTS; OPTIMIZATION; TRANSISTORS;
D O I：
10.1063/1.4996992
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i.e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon. (C) 2017 Author(s).
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页数：6
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