Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives -: art. no. 024108

被引:196
作者
Wang, LS
Zhang, XZ [1 ]
Zhao, SQ
Zhou, GY
Zhou, YL
Qi, JJ
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
关键词
D O I
10.1063/1.1851607
中图分类号
O59 [应用物理学];
学科分类号
摘要
Well-aligned ZnO nanowires were synthesized by simple physical vapor deposition using c-oriented ZnO thin films as substrates without catalysts or additives. The synthesized ZnO nanowires have two typical average diameters: 60 nm in majority and 120 nm in minority. They are about 4 mum in length and well aligned along the normal direction of the substrate. Most of the synthesized ZnO nanowires are single crystalline in a hexagonal structure and grow along the [001] direction. The c-oriented ZnO thin films control the growth direction. Photoluminescence spectrum was measured showing a single strong ultraviolet emission (380 nm). Such result indicates that the ZnO nanowire arrays can be applied to excellent optoelectronic devices. (C) 2005 American Institute of Physics.
引用
收藏
页码:024108 / 1
页数:3
相关论文
共 18 条
  • [1] Luminescence and nonradiative deactivation of excited states involving oxygen defect centers in polycrystalline ZnO
    Egelhaaf, HJ
    Oelkrug, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) : 190 - 194
  • [2] Crystallographic orientation-aligned ZnO nanorods grown by a tin catalyst
    Gao, PX
    Ding, Y
    Wang, IL
    [J]. NANO LETTERS, 2003, 3 (09) : 1315 - 1320
  • [3] Low-temperature wafer-scale production of ZnO nanowire arrays
    Greene, LE
    Law, M
    Goldberger, J
    Kim, F
    Johnson, JC
    Zhang, YF
    Saykally, RJ
    Yang, PD
    [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) : 3031 - 3034
  • [4] Room-temperature ultraviolet nanowire nanolasers
    Huang, MH
    Mao, S
    Feick, H
    Yan, HQ
    Wu, YY
    Kind, H
    Weber, E
    Russo, R
    Yang, PD
    [J]. SCIENCE, 2001, 292 (5523) : 1897 - 1899
  • [5] Low-temperature orientation-selective growth and ultraviolet emission of single-crystal ZnO nanowires
    Kim, TW
    Kawazoe, T
    Yamazaki, S
    Ohtsu, M
    Sekiguchi, T
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (17) : 3358 - 3360
  • [6] Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach
    Kong, YC
    Yu, DP
    Zhang, B
    Fang, W
    Feng, SQ
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (04) : 407 - 409
  • [7] Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
    Li, SY
    Lee, CY
    Tseng, TY
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 247 (3-4) : 357 - 362
  • [8] High-density, ordered ultraviolet light-emitting ZnO nanowire arrays
    Liu, CH
    Zapien, JA
    Yao, Y
    Meng, XM
    Lee, CS
    Fan, SS
    Lifshitz, Y
    Lee, ST
    [J]. ADVANCED MATERIALS, 2003, 15 (10) : 838 - +
  • [9] Low-temperature growth of ZnO nanowire array by a simple physical vapor-deposition method
    Lyu, SC
    Zhang, Y
    Lee, CJ
    Ruh, H
    Lee, HJ
    [J]. CHEMISTRY OF MATERIALS, 2003, 15 (17) : 3294 - 3299
  • [10] Characterization and field-emission properties of needle-like zinc oxide nanowires grown vertically on conductive zinc oxide films
    Tseng, YK
    Huang, CJ
    Cheng, HM
    Lin, IN
    Liu, KS
    Chen, IC
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2003, 13 (10) : 811 - 814