Optimization and Fabrication of MEMS suspended structures for nanoscale thermoelectric devices

被引:6
作者
Wei, Lei [1 ,4 ]
Wei, Jiangtao [1 ]
Kuai, Xuebao [1 ]
You, Zhiwei [1 ,2 ,3 ]
Zhang, Mingliang [1 ,4 ]
Liu, Wen [1 ]
Yang, Fuhua [1 ,4 ,5 ]
Wang, Xiaodong [1 ,2 ,3 ,5 ,6 ]
机构
[1] Chinese Acad Sci, Engn Res Ctr Semicond Integrated Technol, Inst Semicond, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[5] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
[6] Beijing Engn Res Ctr Semicond Micronano Integrate, Beijing 100083, Peoples R China
关键词
thermoelectric; MEMS suspended devices; Si nanomaterials; stress; THERMAL-CONDUCTIVITY; 3-OMEGA METHOD; STRAIN; TRANSPORT; NANOWIRES;
D O I
10.1088/1361-6528/ac667a
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
By eliminating the influence of the substrate on parasitic thermal resistance, MEMS suspended structures become one of the accurate nanoscale thermoelectric performance evaluation devices. However, the process of MEMS suspended thermoelectric devices is complex, and its multilayer suspended structure is easy to fracture due to large stress. As a result, optimizing the design of suspended structures is critical in order to reduce manufacturing complexity and increase yield. In this study, finite element simulation is used to investigate the impacts of varying structures and sizes on the stress of MEMS suspended devices. The maximum stress and average stress of silicon nanomaterials are lowered by 90.89% and 92.35%, respectively, by optimizing the structure and size of the beams and nanobelt. Moreover, MEMS suspended devices of various structures are successfully manufactured. It not only increases the yield to more than 70% but also decreases the impact of strain on thermoelectric performance and can be used to create suspended devices with integrated silicon microstrips.
引用
收藏
页数:10
相关论文
共 41 条
  • [1] Data reduction in 3ω method for thin-film thermal conductivity determination
    Borca-Tasciuc, T
    Kumar, AR
    Chen, G
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2001, 72 (04) : 2139 - 2147
  • [2] Silicon nanowires as efficient thermoelectric materials
    Boukai, Akram I.
    Bunimovich, Yuri
    Tahir-Kheli, Jamil
    Yu, Jen-Kan
    Goddard, William A., III
    Heath, James R.
    [J]. NATURE, 2008, 451 (7175) : 168 - 171
  • [3] Chen K-S., 2020, HDB SILICON BASED ME, P787, DOI [10.1016/B978-0-12-817786-0.00039-6, DOI 10.1016/B978-0-12-817786-0.00039-6]
  • [4] Thermal transport of carbon nanomaterials
    Chen, Xue-Kun
    Chen, Ke-Qiu
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2020, 32 (15)
  • [5] Ion Write Microthermotics: Programing Thermal Metamaterials at the Microscale
    Choe, Hwan Sung
    Prabhakar, Radhika
    Wehmeyer, Geoff
    Allen, Frances I.
    Lee, Woochul
    Jin, Lei
    Li, Ying
    Yang, Peidong
    Qiu, Cheng-Wei
    Dames, Chris
    Scott, Mary
    Minor, Andrew
    Bahk, Je-Hyeong
    Wu, Junqiao
    [J]. NANO LETTERS, 2019, 19 (06) : 3830 - 3837
  • [6] Deflection of surface-micromachined devices due to internal, homogeneous or gradient stresses
    Creek, S
    Chitica, N
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1999, 78 (01) : 1 - 7
  • [7] Silicon-integrated high-speed mode and polarization switch-and-selector
    Dong, Yihang
    Zhang, Yong
    Shen, Jian
    Xu, Zihan
    Zou, Xihua
    Su, Yikai
    [J]. JOURNAL OF SEMICONDUCTORS, 2022, 43 (02)
  • [8] High Power Thermoelectric Generator Based on Vertical Silicon Nanowires
    Elyamny, Shaimaa
    Dimaggio, Elisabetta
    Magagna, Stefano
    Narducci, Dario
    Pennelli, Giovanni
    [J]. NANO LETTERS, 2020, 20 (07) : 4748 - 4753
  • [9] In-plane thermal conductivity of sub-20 nm thick suspended mono- crystalline Si layers
    Ferrando-Villalba, P.
    Lopeandia, A. F.
    Abad, Ll
    Llobet, J.
    Molina-Ruiz, M.
    Garcia, G.
    Gerboles, M.
    Alvarez, F. X.
    Goni, A. R.
    Munoz-Pascual, F. J.
    Rodriguez-Viejo, J.
    [J]. NANOTECHNOLOGY, 2014, 25 (18)
  • [10] Hebbal M., 2014, INT J RES ENG TECHNO, V3, p823, DOI [10.15623/ijret.2014.0315155, DOI 10.15623/IJRET.2014.0315155]