Dynamics of spontaneous roughening on the GaAs(001)-(2 x 4) surface

被引：3

作者：

Ding, Z ^{[1
]}

Bullock, DW

Oliver, WF

Thibado, PM

LaBella, VP

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[2] SUNY Albany, Sch NanoSci & NanoEngn, Albany, NY 12203 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

defects; diffusion; morphological stability; roughening; scanning tunneling microscopy; surfaces;

D O I：

10.1016/S0022-0248(02)02272-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The dynamics of a random distribution of spontaneously formed 2D GaAs islands are studied using scanning tunneling microscopy. The equilibrium concentration of islands is easily tuned from 0% to 50% coverage by only changing the As-4 overpressure. Images taken during the early stages of island formation reveal the roughening transition primarily occurs through an intermediate pit formation phase. Interestingly, pit formation in the middle of an otherwise pristine terrace is overwhelmingly preferred to atom detachment from the edges of the terraces. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：35 / 39

页数：5

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