Continuously large-scale preparation of multi-layer graphene grown on polycrystalline SiC microspheres

被引：0
作者：
Ma, Jun [1 ]
Li, Gong-yi [1 ]
Chu, Zeng-yong [1 ]
Hu, Tian-jiao [1 ]
Li, Yi-he [1 ]
Li, Xiao-dong [1 ]
机构：
[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China
来源：
Advance Materials Development and Applied Mechanics | 2014年 / 597卷
关键词：
multi-layer graphene; silicon carbide; large scale; chemical vapor deposition; EPITAXIAL GRAPHENE; GRAPHITE;
D O I：
10.4028/www.scientific.net/AMM.597.99
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
Gram scale multi-layer graphene grown on polycrystalline SiC microspheres were prepared by continuously preparation method in argon through chemical vapor deposition process using liquid polysilacarbosilane as raw material. The observation of products obtained at different temperature confirmed the growth is temperature dependent process. The method could be developed to synthesis hybrid nanostructures based on multi-layer graphene grown on polycrystalline SiC microspheres.
引用
收藏
页码：99 / 102
页数：4
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