Investigation of organic n-type field-effect transistor performance on the polymeric gate dielectrics

被引：21
作者：
Mukherjee, Moumita [1 ]
Mukherjee, Biswanath [1 ]
Choi, Youngill [1 ]
Sim, Kyoseung [1 ]
Do, Junghwan [1 ]
Pyo, Seungmoon [1 ]
机构：
[1] Konkuk Univ, Dept Chem, Seoul 143701, South Korea
来源：
SYNTHETIC METALS | 2010年 / 160卷 / 5-6期
基金：
新加坡国家研究基金会;
关键词：
Organic field-effect transistors; Gate dielectric; Surface properties; Organic semiconductor; THIN-FILM TRANSISTORS; COMPLEMENTARY CIRCUITS; INTEGRATED-CIRCUITS; EFFECT MOBILITY; SURFACE; HETEROJUNCTION; FABRICATION; INSULATOR; MEMORY;
D O I：
10.1016/j.synthmet.2009.11.039
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a copper hexadecafluorophthalocyanine (F16CuPc) based n-type organic field-effect transistor (OFET) with polymeric gate dielectrics with different physical/electrical properties. The gate dielectrics are four types of cross-linked poly(4-vinylphenol) and newly prepared poly(4-phenoxy methyl styrene) and those are characterized based on surface tension, leakage current and capacitance. The performance of F16CUPc OFETs with those gate dielectrics was compared. We found that the composition of the gate dielectrics and the interfacial interaction of F16CUPc with the gate dielectric play a decisive role in the performance of OFETs. The effect of physical/electrical properties, composition and processing condition of the gate dielectrics on the device performance was investigated. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：504 / 509
页数：6
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