Investigation of organic n-type field-effect transistor performance on the polymeric gate dielectrics

被引：21
作者：
Mukherjee, Moumita [1 ]
Mukherjee, Biswanath [1 ]
Choi, Youngill [1 ]
Sim, Kyoseung [1 ]
Do, Junghwan [1 ]
Pyo, Seungmoon [1 ]
机构：
[1] Konkuk Univ, Dept Chem, Seoul 143701, South Korea
来源：
SYNTHETIC METALS | 2010年 / 160卷 / 5-6期
基金：
新加坡国家研究基金会;
关键词：
Organic field-effect transistors; Gate dielectric; Surface properties; Organic semiconductor; THIN-FILM TRANSISTORS; COMPLEMENTARY CIRCUITS; INTEGRATED-CIRCUITS; EFFECT MOBILITY; SURFACE; HETEROJUNCTION; FABRICATION; INSULATOR; MEMORY;
D O I：
10.1016/j.synthmet.2009.11.039
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a copper hexadecafluorophthalocyanine (F16CuPc) based n-type organic field-effect transistor (OFET) with polymeric gate dielectrics with different physical/electrical properties. The gate dielectrics are four types of cross-linked poly(4-vinylphenol) and newly prepared poly(4-phenoxy methyl styrene) and those are characterized based on surface tension, leakage current and capacitance. The performance of F16CUPc OFETs with those gate dielectrics was compared. We found that the composition of the gate dielectrics and the interfacial interaction of F16CUPc with the gate dielectric play a decisive role in the performance of OFETs. The effect of physical/electrical properties, composition and processing condition of the gate dielectrics on the device performance was investigated. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：504 / 509
页数：6
相关论文
共 50 条
[31]   Ladder-like polysilsesquioxane dielectrics for organic field-effect transistor applications [J].
Pei, Mingyuan ;
Lee, Albert S. ;
Hwang, Seung Sang ;
Yang, Hoichang .
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (42) :10955-10964
[32]   Organic Phototransistor with n-Type Semiconductor Channel and Polymeric Gate Dielectric [J].
Mukherjee, Biswanath ;
Mukherjee, Moumita ;
Choi, Youngill ;
Pyo, Seungmoon .
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (43) :18870-18873
[33]   Low-voltage operation of n-type organic field-effect transistors with ionic liquid [J].
Uemura, T. ;
Yamagishi, M. ;
Ono, S. ;
Takeya, J. .
APPLIED PHYSICS LETTERS, 2009, 95 (10)
[34]   New n-type semiconductor material based on styryl fullerene for organic field-effect transistors [J].
Tuktarov, Airat R. ;
Chobanov, Nuri M. ;
Sadretdinova, Zarema R. ;
Salikhov, Renat B. ;
Mullagaliev, Ilnur N. ;
Salikhov, Timur R. ;
Dzhemilev, Usein M. .
MENDELEEV COMMUNICATIONS, 2021, 31 (05) :641-643
[35]   Surface Decoration on Polymeric Gate Dielectrics for Flexible Organic Field-Effect Transistors via Hydroxylation and Subsequent Monolayer Self-Assembly [J].
Yan, Yan ;
Huang, Long-Biao ;
Zhou, Ye ;
Han, Su-Ting ;
Zhou, Li ;
Sun, Qijun ;
Zhuang, Jiaqing ;
Peng, Haiyan ;
Yan, He ;
Roy, V. A. L. .
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (42) :23464-23471
[36]   Donor unit effect on DPP based organic field-effect transistor performance [J].
Takaya, Tomotsugu ;
Mamo, Melaku Dereje ;
Karakawa, Makoto ;
Noh, Yong-Young .
DYES AND PIGMENTS, 2018, 158 :306-311
[37]   Development of High-performance n-Type Organic Field-effect Transistors Based on Nitrogen Heterocycles [J].
Yamashita, Yoshiro .
CHEMISTRY LETTERS, 2009, 38 (09) :870-875
[38]   Doped N-Type Organic Field-Effect Transistors Based on Faux-Hawk Fullerene [J].
Liu, Shiyi ;
DeWeerd, Nicholas J. ;
Reeves, Brian J. ;
San, Long K. ;
Dahal, Drona ;
Krishnan, Raj Kishen Radha ;
Strauss, Steven H. ;
Boltalina, Olga, V ;
Lussem, Bjorn .
ADVANCED ELECTRONIC MATERIALS, 2019, 5 (06)
[39]   Recent progress of n-type organic semiconducting small molecules for organic field-effect transistors [J].
Meng, Qing ;
Hu, Wenping .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2012, 14 (41) :14152-14164
[40]   Development of π-Conjugated Systems Bearing Annelated-Structure with Electronegative Substituents and Their Application to n-Type Organic Field-Effect Transistor [J].
Ie, Yutaka .
JOURNAL OF SYNTHETIC ORGANIC CHEMISTRY JAPAN, 2012, 70 (01) :24-35
12345