Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals

被引:18
作者
Bystrova, EN
Kalaev, VV
Smirnova, OV
Yakovlev, EV
Makarov, YN
机构
[1] STR Inc, Richmond, VA 23255 USA
[2] Soft Impact Ltd, St Petersburg 194156, Russia
关键词
computer simulation; heat transfer; turbulent convection; liquid encapsulated Czochralski growth; InP;
D O I
10.1016/S0022-0248(02)02238-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Prediction of the crystallization front geometry largely affecting crystal defects and growth stability is a crucial issue in numerical simulation of InP liquid encapsulated Czochralski (LEC) growth. In this paper, a comprehensive numerical analysis using various two-dimensional (2D) steady and 3D unsteady models is performed. A 3D unsteady model including the interface shape calculation is presented for the first time. The 3D model is combined with axisymmetric calculations of heat and mass transfer in the entire LEC furnace. Results obtained with different numerical approaches are analyzed and compared to available experimental data. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:189 / 194
页数:6
相关论文
共 12 条
[1]   Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3"-4" gallium arsenide crystals [J].
Böttcher, K ;
Rudolph, P ;
Neubert, M ;
Kurz, M ;
Pusztai, A ;
Müller, G .
JOURNAL OF CRYSTAL GROWTH, 1999, 198 :349-354
[2]   Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results [J].
Dornberger, E ;
Tomzig, E ;
Seidl, A ;
Schmitt, S ;
Leister, HJ ;
Schmitt, C ;
Muller, G .
JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) :461-467
[3]   Improvement of crystalline quality of 3-inch InP wafers for microelectronics applications [J].
Gondet, S ;
Duffar, T ;
Jacob, G ;
Van den Bogaert, N ;
Louchet, F .
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, :381-384
[4]   Thermal stress simulation and interface destabilisation in indium phosphide grown by LEC process [J].
Gondet, S ;
Duffar, T ;
Jacob, G ;
Van den Bogaert, N ;
Louchet, F .
JOURNAL OF CRYSTAL GROWTH, 1999, 198 :129-134
[7]   Growth of long-length 3 inch diameter Fe-doped InP single crystals [J].
Kohiro, K ;
Ohta, M ;
Oda, O .
JOURNAL OF CRYSTAL GROWTH, 1996, 158 (03) :197-204
[8]   2-EQUATION EDDY-VISCOSITY TURBULENCE MODELS FOR ENGINEERING APPLICATIONS [J].
MENTER, FR .
AIAA JOURNAL, 1994, 32 (08) :1598-1605
[9]   THERMAL CHARACTERIZATION OF THE HIGH-PRESSURE CRYSTAL-GROWTH SYSTEM FOR IN-SITU SYNTHESIS AND GROWTH OF INP CRYSTALS [J].
PRASAD, V ;
BLISS, DF ;
ADAMSKI, JA .
JOURNAL OF CRYSTAL GROWTH, 1994, 142 (1-2) :21-30
[10]  
SPALART PR, 1993, 920439 AIAA