Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems

被引:29
作者
Phommahaxay, Alain [1 ]
Suhard, Samuel [1 ]
Bex, Pieter [1 ]
Iacovo, Serena [1 ]
Slabbekoorn, John [1 ]
Inoue, Fumihiro [1 ]
Peng, Lan [1 ]
Kennes, Koen [1 ]
Sleeckx, Erik [1 ]
Beyer, Gerald [1 ]
Beyne, Eric [1 ]
机构
[1] Imec, Leuven, Belgium
来源
2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2019年
关键词
Wafer bonding; Dieletric Bonding; Hybrid Bonding; Die to Wafer bonding; Heterogeneous Integration; Temporary Bond Material;
D O I
10.1109/ECTC.2019.00097
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The recent developments of wafer-to-wafer bonding technology based on direct assembly of inorganic dielectric materials is offering a path for the continuous need for higher integration density and lower interconnect pitches. However, numerous applications could benefit of a higher degree of design flexibility offered by a die-to-wafer approach. The achievement of high yielding die-to-wafer bonding with micron range die overlay is an essential element to unlock the potential of heterogeneous integration.
引用
收藏
页码:607 / 613
页数:7
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