Misfit dislocations study in MOVPE grown lattice-mismatched InGaAs/GaAs heterostructures by means of DLTS technique

被引：7

作者：

Gelczuk, L ^{[1
]}

Dabrowska-Szata, M ^{[1
]}

Józwiak, G ^{[1
]}

Radziewicz, D ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2004年 / 106卷 / 02期

关键词：

D O I：

10.12693/APhysPolA.106.265

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two deep traps associated with lattice-mismatch induced defects in n-type In0.042Ca0.958As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.

引用

页码：265 / 272

页数：8

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