Thermionic electron emission from nitrogen-doped homoepitaxial diamond

被引：31
作者：
Kataoka, Mitsuhiro
Zhu, Chiyu [1 ]
Koeck, Franz A. M. [1 ]
Nemanich, Robert J. [1 ]
机构：
[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
来源：
DIAMOND AND RELATED MATERIALS | 2010年 / 19卷 / 2-3期
关键词：
Diamond; Thermionic emission; Nitrogen doped; Homoepitaxial; PHOTOELECTRON EMISSION; SURFACE; FILMS; AFFINITY;
D O I：
10.1016/j.diamond.2009.09.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nitrogen-doped homoepitaxial diamond films were synthesized for application as low-temperature thermionic electron emitters. Thermionic electron emission measurements were conducted where the emission current was recorded as a function of emitter temperature. At a temperature <600 degrees C an emission current was detected which increased with temperature, and the emission current density was about 1.2 mA/cm(2) at 740 degrees C. The electron emission was imaged with photoelectron emission microscopy (PEEM) and thermionic field-emission electron microscopy (T-FEEM). The image displayed uniform electron emission over the whole surface area. Thermionic emission and ultraviolet photoemission spectroscopy were employed to determine the temperature dependent electron emission energy distribution from the nitrogen-doped homoepitaxial diamond films. The photoemission spectra indicated an effective work function of 2.4 eV at 550 degrees C. These values indicate reduced band bending and establish the potential for efficient electron emission devices based on nitrogen-doped homoepitaxial diamond. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：110 / 113
页数：4
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