Characterisation of electromagnetic compatibility drifts of nanoscale integrated circuit after accelerated life tests

被引：20

作者：

Ben Dhia, S. ^{[1
]}

Boyer, A. ^{[1
]}

Li, B. ^{[1
]}

Ndoye, A. Cisse ^{[1
]}

机构：

[1] INSA Toulouse, Dept Elect, F-31077 Toulouse, France

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 04期

关键词：

Electromagnetic compatibility;

D O I：

10.1049/el.2010.2885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presented is an original study about the effects of integrated circuit aging on electromagnetic emission and immunity to radio frequency interferences. For the first time an electromagnetic compatibility (EMC) qualification procedure is proposed to quantify the EMC level variation over the full lifetime of a component. Results presented show non-negligible variations of the emission and immunity thresholds after accelerated life tests, which could seriously deteriorate EMC margins required to ensure compliance with standard EMC levels.

引用

页码：278 / 279

页数：2