Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy -: art. no. 011921

被引：70

作者：

Wang, XQ ^{[1
]}

Tomita, Y ^{[1
]}

Roh, OH ^{[1
]}

Ohsugi, M ^{[1
]}

Che, SB ^{[1
]}

Ishitani, Y ^{[1
]}

Yoshikawa, A ^{[1
]}

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Ctr Frontier Elect & Photon, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 01期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

D O I：

10.1063/1.1846951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarity of molecular-beam epitaxy grown ZnO films was controlled on nitrided c-sapphire substrate by modifying the interface between the ZnO buffer layer and the nitrided sapphire. The ZnO film grown on nitrided sapphire was proven to be Zn-polar while the O-polar one was obtained by using gallium predeposition on nitrided sapphire, which was confirmed by coaxial impact collision ion scattering spectroscopy and chemical etching effect. The Zn-polar ZnO film showed higher growth rate, slightly better quality, and different surface morphology in comparison to the O-polar one. (C) 2005 American Institute of Physics.

引用

页码：011921 / 1

页数：3

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