Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces

被引：0
作者：
Ohmori, K
Foo, YL
Hong, S
Wen, JG
Greene, JE
Petrov, I
机构：
[1] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
来源：
NANO LETTERS | 2005年 / 5卷 / 02期
关键词：
D O I：
10.1021/nl048340w
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, results in a field of 40-nm-wide Ge nanowires along [72 187 84] with a uniform period of 60 nm.
引用
收藏
页码：369 / 372
页数：4
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