Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces

被引：0

作者：

Ohmori, K

Foo, YL

Hong, S

Wen, JG

Greene, JE

Petrov, I

机构：

[1] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA

来源：

NANO LETTERS | 2005年 / 5卷 / 02期

关键词：

D O I：

10.1021/nl048340w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, results in a field of 40-nm-wide Ge nanowires along [72 187 84] with a uniform period of 60 nm.

引用

页码：369 / 372

页数：4

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