Partial Edge Dislocations Comprised of Metallic Ga Bonds in Heteroepitaxial GaN

被引：4

作者：

Lee, Moonsang ^{[1
]}

Baik, Hionsuck ^{[2
]}

Ryu, Wontaek ^{[3
]}

Jo, Yewon ^{[2
]}

Kong, SeongYoung ^{[2
]}

Yang, Mino ^{[2
,4
]}

机构：

[1] Korea Basic Sci Inst, Daejeon 34133, South Korea

[2] Korea Basic Sci Inst Seoul, Seoul 02841, South Korea

[3] Kookmin Univ, Ctr Interuniv Res Facil, Seoul 02707, South Korea

[4] Univ Paris Sud, Lab Phys Solides, UMR 8502, CNRS, F-91405 Orsay, France

来源：

NANO LETTERS | 2018年 / 18卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Partial edge dislocation; GaN; optical sectioning; metallic bonding; THREADING DISLOCATIONS; SCREW DISLOCATIONS; CONTRAST;

D O I：

10.1021/acs.nanolett.8b01488

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigated the atomic structure of inclined threading edge dislocation (TED) typically observed in GaN grown on Si(lll) through (scanning) transmission electron microscopy. Atomic observations verified that the inclined TED consisted of two partial dislocations. These results imply that the inclined TED possesses a Ga-Ga atomic configuration that is energetically unfavorable. However, the introduction of such structures is considered unavoidable because the TEDs should climb regularly to mediate the applied stress or the increasing surface due to the buffer layer. This Ga-Ga configuration is highly likely to form metallic bonds and appears to be the primary reason for the inferior efficacy of a GaN light-emitting diode grown on Si(111).

引用

页码：4866 / 4870

页数：5

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