Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

被引：26

作者：

Seo, Hyungtak ^{[2
]}

Cho, Young-Je ^{[1
]}

Kim, Jinwoo ^{[3
]}

Bobade, Santosh M. ^{[1
]}

Park, Kyoung-Youn ^{[1
]}

Lee, Jaegab ^{[4
]}

Choi, Duck-Kyun ^{[1
]}

机构：

[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[4] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 22期

关键词：

amorphous semiconductors; carrier density; carrier mobility; conduction bands; Fermi level; gallium compounds; II-VI semiconductors; indium compounds; semiconductor doping; semiconductor thin films; thin film transistors; two-photon processes; ultraviolet radiation effects; wide band gap semiconductors; TRANSPARENT; TRANSPORT;

D O I：

10.1063/1.3429586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to similar to 10(18) cm(-3) from the background level of 10(16) cm(-3), as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at similar to 10(8) and field-effect mobility at 22.7 cm(2)/V s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3429586]

引用

页数：3

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