Synthesis and fine patterning of organic-inorganic composite SiO2-Al2O3 thick films

被引:14
作者
Liang, Q. L. [1 ]
Zhao, G. Y.
Lu, J. G.
机构
[1] Xian Univ Technol, Sch Mat Sci & Engn, Xian 710048, Peoples R China
[2] Semicond Mfg Int Corp, Qual Engn Div, Shanghai 201203, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
SiO2-Al2O3 thick film; fine patterning; sol-gel process;
D O I
10.1016/j.apsusc.2006.12.106
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Organic-inorganic composite SiO2-A1(2)O(3) films have been prepared by sol-gel using methacryloxypropyl trimethoxysilane and aluminum sec-butoxide as the precursors. By introduction of organic groups into the inorganic backbone, the smooth and crack-free films could be readily achieved by a one-step dip-coating process, with the thickness up to 4.6 mu m after being post-baked at 200 degrees C for 2 h. The films presented in an amorphous phase with an acceptable chemical homogeneity. Owing to the formation of chelate rings, the gel films showed a strong photosensitivity to ultraviolet light at 325 nm. The uniform fine patterns of SiO2-Al2O3 thick films could be well defined by ultraviolet light imprinting simply using a mask. These performances of SiO2-Al2O3 films indicate the potential for integrated optical systems. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:5442 / 5446
页数:5
相关论文
共 21 条
[1]   ORGANICALLY MODIFIED SIO2 AND AL2O3 FILMS AS SELECTIVE COMPONENTS FOR GAS SENSORS [J].
ALTHAINZ, P ;
DAHLKE, A ;
FRIETSCHKLARHOF, M ;
GOSCHNICK, J ;
ACHE, HJ .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 145 (02) :611-618
[2]   Er3+-doped SiO2-Al2O3 thin films prepared by the sol-gel route [J].
Armelao, L ;
Gross, S ;
Obetti, G ;
Tondello, E .
SURFACE & COATINGS TECHNOLOGY, 2005, 190 (2-3) :218-222
[3]   WAVE-GUIDE RAMAN-SPECTROSCOPY OF TIO2SIO2 THIN-FILMS [J].
BAHTAT, M ;
MUGNIER, J ;
BOVIER, C ;
ROUX, H ;
SERUGHETTI, J .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 147 :123-126
[4]   Properties of SiO2 and Al2O3 films for electrical insulation applications deposited by reactive pulse magnetron sputtering [J].
Bartzsch, H ;
Glöss, D ;
Böcher, B ;
Frach, P ;
Goedicke, K .
SURFACE & COATINGS TECHNOLOGY, 2003, 174 :774-778
[5]   Fabrication of ridge waveguides: a new solgel route [J].
Fardad, A ;
Andrews, M ;
Milova, G ;
Malek-Tabrizi, A ;
Najafi, I .
APPLIED OPTICS, 1998, 37 (12) :2429-2434
[6]   Organic-inorganic materials for integrated optoelectronics [J].
Fardad, MA ;
Fallahi, M .
ELECTRONICS LETTERS, 1998, 34 (20) :1940-1941
[7]   Sol-gel multimode interference power splitters [J].
Fardad, MA ;
Fallahi, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (06) :697-699
[8]   Effect of oxygen pressure on the microstructure and properties of the Al2O3-SiO2 thin films deposited by E-beam evaporation [J].
Huang, HH ;
Liu, YS ;
Chen, YM ;
Huang, MC ;
Wang, MC .
SURFACE & COATINGS TECHNOLOGY, 2006, 200 (10) :3309-3313
[9]   Evolution of the Si environment in mullite solid solution by Si-29 MAS-NMR spectroscopy [J].
Jaymes, I ;
Douy, A ;
Massiot, D ;
Coutures, JP .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 204 (02) :125-134
[10]   SOL-GEL INTEGRATED OPTICAL COUPLER BY ULTRAVIOLET-LIGHT IMPRINTING [J].
LI, CY ;
CHISHAM, J ;
ANDREWS, M ;
NAJAFI, SI ;
MACKENZIE, JD ;
PEYGHAMBARIAN, N .
ELECTRONICS LETTERS, 1995, 31 (04) :271-272