Band-gap engineering of La1-xNdxAlO3 (x=0, 0.25, 0.50, 0.75, 1) perovskite using density functional theory: A modified Becke Johnson potential study

被引:3
|
作者
Sandeep [1 ]
Rai, D. P. [2 ]
Shankar, A. [3 ]
Ghimire, M. P. [4 ]
Sakhya, Anup Pradhan [5 ]
Sinha, T. P. [5 ]
Khenata, R. [6 ]
Omran, S. Bin [7 ]
Thapa, R. K. [1 ]
机构
[1] Mizoram Univ, Dept Phys, Aizawl 796004, India
[2] Pachhunga Univ Coll, Dept Phys, Aizawl 796001, India
[3] Univ N Bengal, Dept Phys, Darjeeling 734013, India
[4] IFW Dresden eV, POB 270116, D-01171 Dresden, Germany
[5] Bose Inst, Dept Phys, 93-1 Acharya Prafulla Chandra Rd, Kolkata 700009, India
[6] Univ Mascara, Dept Technol, Lab Phys Quant & Modelisat Math LPQ3M, Algiers 29000, Algeria
[7] King Saud Univ, Dept Phys & Astron, Coll Sci, POB 2455, Riyadh 11451, Saudi Arabia
关键词
density functional theory; rare earth aluminates; perovskites; electronic structures; MICROWAVE DIELECTRIC-PROPERTIES; LASER;
D O I
10.1088/1674-1056/25/6/067101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The structural, electronic, and magnetic properties of the Nd-doped Rare earth aluminate, La1-xNdxAlO3 (x = 0% to 100%) alloys are studied using the full potential linearized augmented plane wave (FP-LAPW) method within the density functional theory. The effects of the Nd substitution in LaAlO3 are studied using the supercell calculations. The computed electronic structure with the modified Becke-Johnson (mBJ) potential based approximation indicates that the La1-xNdxAlO3 alloys may possess half-metallic (HM) behaviors when doped with Nd of a finite density of states at the Fermi level (E-F). The direct and indirect band gaps are studied each as a function of x which is the concentration of Nd-doped LaAlO3. The calculated magnetic moments in the La1-xNdxAlO3 alloys are found to arise mainly from the Nd-4f state. A probable half-metallic nature is suggested for each of these systems with supportive integral magnetic moments and highly spin-polarized electronic structures in these doped systems at E-F. The observed decrease of the band gap with the increase in the concentration of Nd doping in LaAlO3 is a suitable technique for harnessing useful spintronic and magnetic devices.
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页数:7
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