High resolution core level spectroscopy of hydrogen-terminated (100) diamond

被引：19
|
作者：
Schenk, A. K. [1 ]
Rietwyk, K. J. [2 ]
Tadich, A. [1 ,3 ]
Stacey, A. [4 ]
Ley, L. [1 ,5 ]
Pakes, C. I. [1 ]
机构：
[1] La Trobe Univ, La Trobe Inst Mol Sci, Dept Chem & Phys, Bundoora, Vic 3086, Australia
[2] Bar Ilan Univ, Ctr Nanotechnol & Adv Mat, Dept Chem, IL-5290002 Ramat Gan, Israel
[3] Australian Synchrotron, 800 Blackburn Rd, Clayton, Vic 3168, Australia
[4] Univ Melbourne, Ctr Quantum Computat & Commun Technol, Sch Phys, Melbourne, Vic 3010, Australia
[5] Univ Erlangen Nurnberg, Inst Tech Phys, Staudtstr 1, D-91058 Erlangen, Germany
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2016年 / 28卷 / 30期
基金：
澳大利亚研究理事会;
关键词：
photoelectron spectroscopy; hydrogen-terminated diamond; diamond (100) surface; X-RAY PHOTOEMISSION; ABSORPTION FINE-STRUCTURE; SINGLE-CRYSTAL; SURFACE; SPECTRA; ORIGIN;
D O I：
10.1088/0953-8984/28/30/305001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Synchrotron-based photoelectron spectroscopy experiments are presented that address a long standing inconsistency in the treatment of the C1s core level of hydrogen terminated (1 0 0) diamond. Through a comparison of surface and bulk sensitive measurements we show that there is a surface related core level component to lower binding energy of the bulk diamond component; this component has a chemical shift of -0.16 +/- 0.05 eV which has been attributed to carbon atoms which are part of the hydrogen termination. Additionally, our results indicate that the asymmetry of the hydrogen terminated (1 0 0) diamond C1s core level is an intrinsic aspect of the bulk diamond peak which we have attributed to sub-surface carbon layers.
引用
收藏
页数：12
相关论文
共 50 条
  • [31] Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer
    Minghui, Zhang
    Wei, Wang
    Feng, Wen
    Fang, Lin
    Genqiang, Chen
    Fei, Wang
    Shi, He
    Yanfeng, Wang
    Shuwei, Fan
    Renan, Bu
    Tai, Min
    Cui, Yu
    Hongxing, Wang
    FUNCTIONAL DIAMOND, 2022, 2 (01): : 258 - 262
  • [32] Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric
    Gui, Qingzhong
    Yu, Wei
    Cheng, Chunmin
    Guo, Hailing
    Zha, Xiaoming
    Robertson, John
    Liu, Sheng
    Zhang, Zhaofu
    Guo, Yuzheng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (11) : 5550 - 5556
  • [33] Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001)
    Kono, Shozo
    Kageura, Taisuke
    Hayashi, Yuya
    Ri, Sung-Gi
    Teraji, Tokuyuki
    Takeuchi, Daisuke
    Ogura, Masahiko
    Kodama, Hideyuki
    Sawabe, Atsuhito
    Inaba, Masafumi
    Hiraiwa, Atsushi
    Kawarada, Hiroshi
    DIAMOND AND RELATED MATERIALS, 2019, 93 : 105 - 130
  • [34] Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors
    Chen, Zhihao
    Yu, Xinxin
    Zhou, Jianjun
    Mao, Shuman
    Kong, Yuechan
    Chen, Tangsheng
    Xu, Ruimin
    Yan, Bo
    Xu, Yuehang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (01) : 278 - 284
  • [35] Characterization and Mobility Analysis of Normally off Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors
    Zhang, Jin-Feng
    Chen, Wan-Jiao
    Ren, Ze-Yang
    Su, Kai
    Yang, Peng-Zhi
    Hu, Zhuang-Zhuang
    Zhang, Jin-Cheng
    Hao, Yue
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (01):
  • [36] Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn
    He, Shi
    Wang, Yanfeng
    Chen, Genqiang
    Wang, Juan
    Li, Qi
    Zhang, Qianwen
    Wang, Ruozheng
    Zhang, Minghui
    Wang, Wei
    Wang, Hongxing
    MATERIALS, 2022, 15 (14)
  • [37] Energetic disorder impacts energy-level alignment of alpha-sexithiophene on hydrogen-terminated silicon and silicon oxide
    Chen, Botong
    Hu, Jiaxin
    Wang, Qi
    Duhm, Steffen
    MATERIALS RESEARCH EXPRESS, 2022, 9 (08)
  • [38] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric
    Liu, J. W.
    Liao, M. Y.
    Imura, M.
    Oosato, H.
    Watanabe, E.
    Koide, Y.
    APPLIED PHYSICS LETTERS, 2013, 102 (11)
  • [39] Threshold phenomena in high-resolution core-level photoelectron spectroscopy: the ethene molecule
    Kempgens, B
    Kivimaki, A
    Itchkawitz, BS
    Koppe, HM
    Schmidbauer, M
    Neeb, M
    Maier, K
    Feldhaus, J
    Bradshaw, AM
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1998, 93 (1-3) : 39 - 48
  • [40] CO dissociation on Mo(110) studied by high-resolution core-level spectroscopy
    Jaworowski, AJ
    Smedh, M
    Borg, M
    Sandell, A
    Beutler, A
    Sorensen, SL
    Lundgren, E
    Andersen, JN
    SURFACE SCIENCE, 2001, 492 (1-2) : 185 - 194
12345