Extremely high electron mobility of pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

被引：6

作者：

Kitada, T ^{[1
]}

Aoki, T ^{[1
]}

Watanabe, I ^{[1
]}

Shimomura, S ^{[1
]}

Hiyamizu, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期

关键词：

D O I：

10.1063/1.1807023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Much enhanced electron mobility of 105 000 cm(2)/V s with a high sheet electron concentration (N-s) of 3.1x10(12) cm(-12) was obtained at 77 K in pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum well (MD-QW) grown on a (411)A InP substrate by molecular-beam epitaxy. This MD-QW has the "(411)A super-flat interfaces" (effectively atomically flat interfaces over a wafer-size area), which leads to significant reduction of interface roughness scattering at low temperatures. The highest electron mobility of the (411)A MD-QW was achieved by using pseudomorphic In0.46Al0.54As barriers. The electron mobility is 44% higher than that (73 000 cm(2)/V s at 77 K) of a similar MD-QW structure grown on a conventional (100)InP substrate. (C) 2004 American Institute of Physics.

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页码：4043 / 4045

页数：3

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