Electrical properties of a silicon-based PT/PZT/PT sandwich structure

被引：0
|
作者：
Ren, TL [1 ]
Zhang, LT [1 ]
Liu, LT [1 ]
Li, ZJ [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2000年 / 33卷 / 15期
关键词：
D O I：
10.1088/0022-3727/33/15/101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A silicon-based PbTiO3 /Pb(Zr0.53Ti0.47)O-3 /PbTiO3 (PT/PZT/PT) sandwich structure is prepared by a sol-gel method. The PT layers in the sandwich structure are used as seeding layers to improve the crystallization of the lead zirconate titanate (PZT) ferroelectric thin films. The maximum dielectric constant of about 950 is obtained at the coercive field 17 kV cm(-1), and the remnant polarization is 19 mu C cm(-2). The leakage current density is less than 5 x 10(-9) A cm(-2) when the applied voltage is below 200 kV cm(-1) Compared with the ferroelectric structures without and with only one PT seeding layer, the processing temperature is reduced greatly, while the electrical properties of the PZT films are further improved.
引用
收藏
页码：L77 / L79
页数：3
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