Electrical properties of a silicon-based PT/PZT/PT sandwich structure

被引：0
|
作者：
Ren, TL [1 ]
Zhang, LT [1 ]
Liu, LT [1 ]
Li, ZJ [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2000年 / 33卷 / 15期
关键词：
D O I：
10.1088/0022-3727/33/15/101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A silicon-based PbTiO3 /Pb(Zr0.53Ti0.47)O-3 /PbTiO3 (PT/PZT/PT) sandwich structure is prepared by a sol-gel method. The PT layers in the sandwich structure are used as seeding layers to improve the crystallization of the lead zirconate titanate (PZT) ferroelectric thin films. The maximum dielectric constant of about 950 is obtained at the coercive field 17 kV cm(-1), and the remnant polarization is 19 mu C cm(-2). The leakage current density is less than 5 x 10(-9) A cm(-2) when the applied voltage is below 200 kV cm(-1) Compared with the ferroelectric structures without and with only one PT seeding layer, the processing temperature is reduced greatly, while the electrical properties of the PZT films are further improved.
引用
收藏
页码：L77 / L79
页数：3
相关论文
共 50 条
  • [1] Electrical properties of a silicon-based PT/PZT/PT sandwich structure
    Ren, TL
    Zhang, LT
    Liu, LT
    Li, ZJ
    FERROELECTRICS, 2001, 259 (1-4) : 311 - 316
  • [2] Electrical properties of a new silicon-based PT/PZT/PT sandwich structure
    Ren, Tianling
    Zhang, Lintao
    Zhang, Wuquan
    Li, Chunxiao
    Liu, Litian
    Li, Zhijian
    Yadian Yu Shengguang/Piezoelectrics and Acoustooptics, 2000, 22 (06): : 407 - 409
  • [3] A silicon-based PT/PZT/PT sandwich structure for memory devices
    Ren, TL
    Zhang, LT
    Liu, JS
    Liu, LT
    Li, ZJ
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 706 - 709
  • [4] Comparison of properties of Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors
    Jia, Z
    Ren, TL
    Liu, TZ
    Hu, H
    Zhang, ZG
    Xie, D
    Liu, LT
    CHINESE PHYSICS LETTERS, 2006, 23 (04) : 1042 - 1045
  • [5] Comparison of properties of Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors
    Institute of Microelectronics, Tsinghua University, Beijing 100084, China
    Chin. Phys. Lett., 2006, 4 (1042-1045):
  • [6] Studies of a PT/PZT/PT sandwich structure for feram applications using sol-gel processing
    Ren, TL
    Zhang, LT
    Liu, LT
    Li, ZJ
    INTEGRATED FERROELECTRICS, 2001, 39 (1-4) : 1165 - 1172
  • [7] A new silicon-based ferroelectric sandwich structure
    Ren, TL
    Zhang, LT
    Liu, LT
    Li, ZJ
    CHINESE PHYSICS LETTERS, 2001, 18 (01): : 132 - 133
  • [8] A new silicon-based ferroelectric sandwich structure
    Ren, TL
    Zhang, LT
    Liu, LT
    Li, ZJ
    PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 881 - 884
  • [9] Structure and electrical properties of PZT/LNO/PT multilayer films on stainless steel substrates
    ZHAO Xuelian
    Rare Metals, 2012, 31 (03) : 272 - 275
  • [10] Structure and electrical properties of PZT/LNO/PT multilayer films on stainless steel substrates
    Zhao Xuelian
    Jiang Dan
    Yu Shengwen
    Cheng Jinrong
    RARE METALS, 2012, 31 (03) : 272 - 275
12345